PART |
Description |
Maker |
LTE-2871 |
Gaalas T-1 3/4 Modified Infrared Emitting Diode
|
Lite-On Technology
|
Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器,红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米 GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm From old datasheet system
|
红外LED SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
127141 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
127141H |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
128254 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
115161H |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
136144 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH OSRAM GmbH
|
2-1191566-7 2-1190527-4 2-1191560-6 014389-000 2-1 |
WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT WIRE, RADIATION-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATED COPPER, LIGHTWEIGHT WIRE RADIATIONN-CROSSLINKED, MODIFIED, ETFE-INSULATED, TIN-COATEDCOPPER, LIGHTWEIGHT
|
Tyco Electronics
|
P1602ABLXX P0602ABLXX P3002AALXX P3002ABLXX P3002A |
The SIDACtor庐 Series Modified TO-220 are designed to protect baseband The SIDACtor? Series Modified TO-220 are designed to protect baseband
|
Littelfuse
|
ACK-2546 |
LED MODIFIED DISPLAY AND DRIVER KIT
|
Applied Concepts Inc.
|